Organizers:

Representative

Co-Organizers

Correspondence

Scope:

This area covers all the aspects in materials, processes and characterization technologies for advanced LSI devises and their integration technology.

Topics:

• Advanced gate-stack and channel technology, junction technology, and novel techniques for oxidation, thin film deposition, diffusion, dopant activation, etching, surface preparation and so forth, in relation to front-end-of-line (FEOL) processes.
• Interconnect technology such as Cu/low-k systems, 3-D interconnects and on-chip optical interconnects, in relation to back-end-of line (BEOL) processes.
• Advanced CMOS device technology and advanced memory device technology for high-speed, low-power and high-density applications
• Methodology for material and device characterization, modeling and simulation for LSI processes, reliability physics and analysis including the variability of processes and device characteristics.

Invited Speakers:

Lecture title: The Growth of III-V and Ge on Si for High-Speed and Low-Power Logic Device Application

Lecture title: New Device Structures and Materials for Nano-CMOS (tentative)

Lecture title: Epitaxial Growth in Advanced SiGe and Ge MOS Devices: Challenges and Solutions

Lecture title: Material Analysis and Morphology Investigations of Cu-Based Bonding Technology for 3D Integration

Lecture title: Direct Observation of Electronic Structures in High-k Based Devices under Device Operation

Lecture title: Vapor Deposition of Materials for Semiconductors

Lecture title: undecided