◀Back to List

The 25th Annual Meeting of MRS-J Program List: Oral

D-3 : Interface Characterization

Entry No Keynote/
Presentation Date Time to
Time to
Award Presenter Name Affiliation Paper Title
Dec. 9
9:30 - 17:10
万国橋会議センター/Room A
Bankokubashi Kaigi Center/ Room A
   Opening Dec. 9 09:30 09:40 シンポジウム提案者 物質・材料研究機構 山下良之
Chair :
長田貴弘 (物質・材料研究機構)
Takahiro NAGATA (NIMS)
2080   Invited   D3-I9-001 Dec. 9 09:40 10:10 *G Takashi TSUCHIYA Tokyo university of science Observation of Redox Behavior in Nanoionics Devices Using X-ray Photoemission Spectroscopy
2084     D3-O9-002 Dec. 9 10:10 10:30 Yoshiyuki YAMASHITA National Institute for Materials Science Bias Dependent Potential of High-k thin films obtained from Operando Photoelectron Spectroscopy
   Break Dec. 9 10:30 11:00
Chair :
山下良之 (物質・材料研究機構)
2221   Invited   D3-I9-003 Dec. 9 11:00 11:40 Takahiro NAGATA National Institute for Materials Science Hard X-ray Photoelectron Spectroscopic Study on High-k Dielectrics Based ReRAM Structure under Bias Operation
2902     D3-O9-004 Dec. 9 11:40 12:00 *G Hiromi TANAKA National Institute of Technology, Yonago College Mg Doping into Bi-2212 High Temperature Superconducting Whisker and its Characterization
Chair :
土屋 敬志(Takashi TSUCHIYA)
東京理科大学(Tokyo university of science)
2854   Invited   D3-I9-005 Dec. 9 13:00 13:40 Hirokazu FUKIDOME Tohoku University Operando nanospectroscopy to designate high-performance graphene transistors
2126     D3-O9-006 Dec. 9 13:40 14:00 Yoshiyuki YAMASHITA National Institute for Materials Science Interface States at Ultrathin-oxide/Si Interface Obtained from Operando Photoelectron Spectroscopy
2303     D3-O9-007 Dec. 9 14:00 14:20 *M Yoshihisa SUZUKI Meiji University/National Institute for Materials Science Interface Ge diffusion effect on epitaxial growth of rutile type TiO2 on (100) Ge substrate
2915   Invited   D3-I9-008 Dec. 9 14:20 14:50 Shogo MIYOSHI Graduate School of Engineering, The University of Tokyo Surface Chemical State of (La,Sr)CoO3-based Oxides for Cathode of Solid Oxide Fuel Cells
   Break Dec. 9 14:50 15:10
Chair :
山下良之 (物質・材料研究機構)
2922   Invited   D3-I9-009 Dec. 9 15:10 15:40 *G Tomohiro YAMAGUCHI Kogakuin University Epitaxial growth of GaInN by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
2073     D3-O9-010 Dec. 9 15:40 16:00 *G Tsuneaki SAKURAI Graduate School of Engineering, Kyoto University/Graduate School of Engineering, Osaka University Development of Evaluation Technique of Charge Carrier Transporting Property at Insulator-Semiconductor Interfaces
2861   Invited   D3-I9-011 Dec. 9 16:00 16:30 Takao ISHIDA AIST Thermoelectric Property of Ordered PEDOT:PSS Films and its TE Module Fabrication
2588     D3-O9-012 Dec. 9 16:30 16:50 *G Huaping SONG College of Science and Technology, Nihon University/Research Institute, Kochi University of Technology Investigation on the Indium Codoping Effects in the Humidity Stability of Ga-doped ZnO Films
2609     D3-O9-013 Dec. 9 16:50 17:10 *G Dominic GERLACH National Institute for Materials Science, Tsukuba, Ibaraki/Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin Metallization of the buried Si / SnO:F interface as revealed by hard x-rays